关键词metalli
标准
为您共找出"500+"个相关器件
图片 型号 厂商 标准 分类 描述
Image: MGDBI-10-I-E MGDBI-10-I-E ETC 2:1 standard input single & Bi outputs metallic case - 1.500 vdc isolation
Image: MGDBI-10-I-F MGDBI-10-I-F ETC 2:1 standard input single & Bi outputs metallic case - 1.500 vdc isolation
Image: Q68000-A8615 Q68000-A8615 Siemens Semiconductor Group gaas mmic (two stages monolithic microwave IC mmicAmplifier all gold metallisation)
Image: D1001UK D1001UK Semelab / TT electronics gold metallised multi-purpose silicon dmos RF fet 20w - 28v - 175mhz single ended
Image: CGY31 CGY31 Siemens Semiconductor Group gaas mmic (two-stage monolithic microwave IC mmic amplifier all-gold metallization chip fully passivated)
Image: CFY25 CFY25 Siemens Semiconductor Group gaas fet (low noise high gain for front-end amplifiers lon-implanted planar structure all gold metallization)
Image: MGDBI-10-C-F MGDBI-10-C-F ETC 2:1 standard input single & Bi outputs metallic case - 1.500 vdc isolation
Image: MGDSI-10 MGDSI-10 ETC 2:1 standard input single & Bi outputs metallic case - 1.500 vdc isolation
Image: MGDSI-10-C-B MGDSI-10-C-B ETC 2:1 standard input single & Bi outputs metallic case - 1.500 vdc isolation
Image: MGDSI-10-C-C MGDSI-10-C-C ETC 2:1 standard input single & Bi outputs metallic case - 1.500 vdc isolation
Image: MGDSI-10-C-E MGDSI-10-C-E ETC 2:1 standard input single & Bi outputs metallic case - 1.500 vdc isolation
Image: MGDSI-10-C-F MGDSI-10-C-F ETC 2:1 standard input single & Bi outputs metallic case - 1.500 vdc isolation
Image: CGY52 CGY52 Siemens Semiconductor Group gaas mmic (two stages monolithic microwave IC mmicAmplifier all gold metallisation)
Image: Q68000-A6887 Q68000-A6887 Siemens Semiconductor Group gaas mmic (two-stage monolithic microwave IC mmic amplifier all-gold metallization chip fully passivated)
Image: D2290UK D2290UK Semelab / TT electronics gold metallised multi-purpose silicon dmos RF fet 1W - 12.5V - 1ghz single ended
Image: Q62703-F106 Q62703-F106 Siemens Semiconductor Group gaas fet (low noise high gain for front-end amplifiers lon-implanted planar structure all gold metallization)
Image: Q62703-F107 Q62703-F107 Siemens Semiconductor Group gaas fet (low noise high gain for front-end amplifiers lon-implanted planar structure all gold metallization)
Image: Q62703-F108 Q62703-F108 Siemens Semiconductor Group gaas fet (low noise high gain for front-end amplifiers lon-implanted planar structure all gold metallization)
Image: HUGD50 HUGD50 ETC hold-Up solution 16-40v & 9-36v DC/DC converter compatible metallic case
Image: HUGD-50 HUGD-50 ETC hold-Up solution 16-40v & 9-36v DC/DC converter compatible metallic case

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