图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
W45NM50 |
STMicroelectronics |
|
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N-channel 550v tjmax - 0.08ohm - 45a TO-247 mdmesh TM mosfet |
|
STB20NM50_07 |
STMicroelectronics |
|
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N-channel 500v - 0.20?? - 20a - to220/FP-d2pak-i2pak mdmesh?? power mosfet |
|
STL20NM20N_06 |
STMicroelectronics |
|
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N-channel 200v - 0.088?? - 20a powerflat?? ultra low gate charge mdmesh?? II mosfet |
|
160N75F3 |
STMicroelectronics |
|
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N-channel 75v - 3.5m ohm - 120a - TO-220 - TO-247 - d2pak mdmesh TM low voltage power mosfet |
|
STD60N55 |
STMicroelectronics |
  |
半导体
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N-channel 55v - 8.0mз - 65a - dpak - ipak mdmesh⑩ low voltage power mosfet |
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STD60N55-1 |
STMicroelectronics |
|
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N-channel 55v - 8.0mз - 65a - dpak - ipak mdmesh⑩ low voltage power mosfet |
|
STB180N55 |
STMicroelectronics |
  |
半导体
|
N-channel 55v - 2.9m-ohm - 120a - D-2 pak - TO-220 mdmesh-TM low voltage power mosfet |
|
STH13N120K5-2AG |
STMicroelectronics |
|
半导体
晶体管
|
采用h2pak-2封装的汽车级N通道1200 V,典型值630 mohm,12 A mdmesh K5功率mosfet |
|
STW70N65DM6 |
STMicroelectronics |
|
半导体
晶体管
|
采用TO-247封装的N沟道650 V,典型值为360 mohm,68 A mdmesh dm6功率mosfet |
|
STWA70N65DM6 |
STMicroelectronics |
|
半导体
晶体管
|
N通道650 V,360 mohm典型值,68 A mdmesh dm6功率mosfet,采用TO-247长引线封装 |
|
STB16N90K5 |
STMicroelectronics |
|
半导体
晶体管
|
采用d2pak封装的N沟道900 V,典型值280 mohm,15 A mdmesh K5功率mosfet |
|
STB18N60M6 |
STMicroelectronics |
|
半导体
晶体管
|
采用d2pak封装的N沟道600 V,230 mohm典型值,13 A mdmesh M6功率mosfet |
|
STB46N60M6 |
STMicroelectronics |
|
半导体
晶体管
|
采用d2pak封装的N沟道600 V,典型值为68 mohm,36 A mdmesh M6功率mosfet |
|
STF16N90K5 |
STMicroelectronics |
|
半导体
晶体管
|
N沟道900 V,典型值280 mohm,15 A mdmesh K5功率mosfet,采用TO-220fp封装 |
|
STL10N60M6 |
STMicroelectronics |
|
半导体
晶体管
|
采用powerflat 5x6 HV封装的N沟道600 V,典型550 mohm,5.5 A mdmesh M6功率mosfet |
|
STL11N65M2 |
STMicroelectronics |
|
半导体
晶体管
|
N通道650 V,0.62 ohm典型值,5 A mdmesh M2功率mosfet,采用powerflat 5x5 HV封装 |
|
STL17N60M6 |
STMicroelectronics |
|
半导体
晶体管
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N沟道600 V,0.29 ohm典型值,12 A mdmesh M6功率mosfet,采用powerflat 8x8封装 |
|
STL47N60M6 |
STMicroelectronics |
|
半导体
晶体管
|
N通道600 V,典型值70 mohm,31 A mdmesh M6功率mosfet,采用powerflat 8x8 HV封装 |
|
STL9N65M2 |
STMicroelectronics |
|
半导体
二极管,整流器 - 阵列
|
N通道650 V,典型值为0.85欧姆,4.5 A mdmesh M2功率mosfet,采用powerflat 5x5 HV封装 |
|
STW70N60DM6-4 |
STMicroelectronics |
|
半导体
晶体管
|
N通道600 V,36 mohm典型值,62 A mdmesh dm6功率mosfet,采用to247-4封装 |