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NAND512R4M0AZB5E |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M0AZB5F |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M0AZC5E |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M0AZC5F |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M0BZB5E |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M0BZB5F |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M0BZC5E |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M0BZC5F |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M2AZB5E |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M2AZB5F |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M2AZC5E |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M2AZC5F |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND512R4M2BZB5E |
STMicroelectronics |
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256/512mb/1gb (x8/x16, 1.8/3V, 528 byte page) nand flash memories + 256/512mb (x16/x32, 1.8V) lpsdram, mcp |
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NAND01G-N |
ETC |
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1 gbit (x8/x16) 2112 byte page Nand flash memory and 512 mbit (x16) lpsdram, 1.8V, multi-chip package |
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NAND01GR3N6 |
ETC |
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1 gbit (x8/x16) 2112 byte page Nand flash memory and 512 mbit (x16) lpsdram, 1.8V, multi-chip package |
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NAND01GR4N5 |
ETC |
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1 gbit (x8/x16) 2112 byte page Nand flash memory and 512 mbit (x16) lpsdram, 1.8V, multi-chip package |
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AT91SAM9260 |
Microchip Technology |
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半导体
微控制器
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特征： 运行速度高达210 mhz的arm926 arm thumb处理器 8 KB数据高速缓存，8 KB指令高速缓存 内存管理单元 8 KB sram，单周期访问 rom嵌入标准引导程序的32 KB 32位外部总线接口（ebi），支持sdram，LPsdram，静态存储器，突发闪存，与Compactflash®和nand flash /smartmedia®的无胶连接以及1位ecc |
