|
HGTD10N40F1 |
Intersil Corporation |
|
|
10a, 400v and 500v N-channel igbts |
|
HGTD10N40F1S |
Intersil Corporation |
|
|
10a, 400v and 500v N-channel igbts |
|
IRKT430-16 |
International Rectifier |
|
|
insulated gate bipolar transistors (igbts)(额定电压16v,快速T结构绝缘栅型双极型晶体管) |
|
IRKT430-18 |
International Rectifier |
|
|
insulated gate bipolar transistors (igbts)(额定电压18v,T结构快速绝缘栅型双极型晶体管) |
|
IRKT430-20 |
International Rectifier |
|
|
insulated gate bipolar transistors (igbts)(额定电压20v,T结构快速绝缘栅型双极型晶体管) |
|
SG50N06DT |
Sirectifier Global Corp. |
|
|
discrete igbts |
|
SG50N06T |
Sirectifier Global Corp. |
|
|
discrete igbts |
|
HGTP3N60C3 |
Fairchild Semiconductor |
|
|
6A, 600v, ufs series N-channel igbts |
|
HGTP3N60C3 |
Intersil Corporation |
|
|
6A, 600v, ufs series N-channel igbts |
|
HGTP5N120BN |
Intersil Corporation |
|
|
21a, 1200v, npt series N-channel igbts |
|
HGTP5N120BND |
Intersil Corporation |
|
|
21a, 1200v, npt series N-channel igbts with anti-parallel hyperfast diodes |
|
HGTP14N41G3VL |
Fairchild Semiconductor |
|
|
14a, 410v N-channel, logic level, voltage clamping igbts |
|
HGTP14N41G3VLS |
Fairchild Semiconductor |
|
|
14a, 410v N-channel, logic level, voltage clamping igbts |
|
HGTP20N35G3VL |
Fairchild Semiconductor |
|
|
20a, 350v N-channel, logic level, voltage clamping igbts |
|
HGTP20N60B3 |
Intersil Corporation |
|
|
40a, 600v, ufs series N-channel igbts |
|
HGTP20N60C3R |
Fairchild Semiconductor |
|
|
40a, 600v, rugged ufs series N-channel igbts |
|
HGTP7N60C3 |
Intersil Corporation |
|
|
14a, 600v, ufs series N-channel igbts |
|
HGTP12N60C3 |
Intersil Corporation |
|
|
24a, 600v, ufs series N-channel igbts |
|
HGTP7N60B3D |
Intersil Corporation |
|
|
14a, 600v, ufs series N-channel igbts with anti-parallel hyperfast diode |
|
SG50N06S |
Sirectifier Global Corp. |
|
|
discrete igbts |