关键词hem
- 标准
图片 | 型号 | 厂商 | 标准 | 分类 | 描述 |
---|---|---|---|---|---|
CGH40045 | Cree Inc | 半导体 | 45 W, RF power gan hemt | ||
EGN010MK | ETC | high voltage - high power gan-hemt | |||
CF001 | ETC | cf001 series gaas pseudomorphic hemt and mesfet chips | |||
CF001-01 | ETC | cf001 series gaas pseudomorphic hemt and mesfet chips | |||
CF001-02 | ETC | cf001 series gaas pseudomorphic hemt and mesfet chips | |||
CF001-03 | ETC | cf001 series gaas pseudomorphic hemt and mesfet chips | |||
CFH77 | Infineon Technologies | gaas hemt for low noise front end amplifiers up to 20 ghz | |||
FHX04LG | Fujitsu | super low noise hemt | |||
FHX05LG | Fujitsu | super low noise hemt | |||
FHX06LG | Fujitsu | super low noise hemt | |||
EGN21A090IV | ETC | high voltage - high power gan-hemt | |||
RFJS3006F | RF Micro Devices | 无源元器件 RF 电源控制器 IC | the rfjs3006f is a 30a, 650v normally-off sourced switched fet (SSfet) gan hemt providing the same insulated gate ease of use as a power MOSfet or an igbt, |