关键词hem
- 标准
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图片 | 型号 | 厂商 | 标准 | 分类 | 描述 |
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CGH40045 | Cree Inc | ![]() ![]() |
半导体 | 45 W, RF power gan hemt |
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EGN010MK | ETC | high voltage - high power gan-hemt | ||
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CF001 | ETC | cf001 series gaas pseudomorphic hemt and mesfet chips | ||
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CF001-01 | ETC | cf001 series gaas pseudomorphic hemt and mesfet chips | ||
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CF001-02 | ETC | cf001 series gaas pseudomorphic hemt and mesfet chips | ||
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CF001-03 | ETC | cf001 series gaas pseudomorphic hemt and mesfet chips | ||
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CFH77 | Infineon Technologies | gaas hemt for low noise front end amplifiers up to 20 ghz | ||
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FHX04LG | Fujitsu | super low noise hemt | ||
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FHX05LG | Fujitsu | super low noise hemt | ||
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FHX06LG | Fujitsu | super low noise hemt | ||
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EGN21A090IV | ETC | high voltage - high power gan-hemt | ||
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RFJS3006F | RF Micro Devices | 无源元器件 RF 电源控制器 IC | the rfjs3006f is a 30a, 650v normally-off sourced switched fet (SSfet) gan hemt providing the same insulated gate ease of use as a power MOSfet or an igbt, |