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2N3634UB |
Microsemi Corporation |
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|
radiation hardened |
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2N3634_1 |
Microsemi Corporation |
|
|
radiation hardened |
|
2N3636UB |
Microsemi Corporation |
|
|
radiation hardened |
|
HS-6664RH |
Intersil Corporation |
|
|
radiation hardened 8K x 8 cmos prom |
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5962F0251101QXC |
Intersil Corporation |
|
|
single event and total dose hardened, high-speed, dual output pwm |
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5962F0251101VXC |
Intersil Corporation |
|
|
single event and total dose hardened, high-speed, dual output pwm |
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5962F0251102QXC |
Intersil Corporation |
|
|
single event and total dose hardened, high-speed, dual output pwms |
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5962F0251102QEC |
Intersil Corporation |
|
|
single event and total dose hardened, high-speed, dual output pwms |
|
5962F0250301QXC |
Intersil Corporation |
|
|
radiation hardened negative low dropout adjustable voltage regulator |
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5962F0250301VXC |
Intersil Corporation |
|
|
radiation hardened negative low dropout adjustable voltage regulator |
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5962F0251101V9A |
Intersil Corporation |
|
|
single event and total dose hardened, high-speed, dual output pwms |
|
ISL78845ASRH |
Intersil Corporation |
|
|
radiation hardened, high performance industrystandard single-ended current mode pwm controller |
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5962F0250301V9A |
Intersil Corporation |
|
|
radiation hardened negative low dropout adjustable voltage regulator |
|
5962F0251101QEC |
Intersil Corporation |
|
|
single event and total dose hardened, high-speed, dual output pwm |
|
5962F0251102VEC |
Intersil Corporation |
|
|
single event and total dose hardened, high-speed, dual output pwms |
|
5962F0251102VXC |
Intersil Corporation |
|
|
single event and total dose hardened, high-speed, dual output pwms |
|
2N3637UB |
Microsemi Corporation |
|
|
radiation hardened |
|
5962F9764101VXC |
Intersil Corporation |
|
|
radiation hardened ultra high frequency npn transistor array |
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5962F9764101VEA |
Intersil Corporation |
|
|
radiation hardened ultra high frequency npn transistor array |
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IRHY57230CM |
International Rectifier |
|
|
200v, N-channel thru-hole radiation hardened power mosFET(200v,通孔安装抗辐射功率N沟道mos场效应管) |