关键词gua
标准
为您共找出"500+"个相关器件
图片 型号 厂商 标准 分类 描述
Image: MN101C35 MN101C35 Panasonic Semiconductor the lower limit for operation guarantee for eprom built-in type is 2.7 V
Image: MN101C35D MN101C35D Panasonic Semiconductor the lower limit for operation guarantee for eprom built-in type is 2.7 V
Image: CJ7815 CJ7815 ETC dong guan shi hua yuan electron CO.,ltd.
Image: MN101C54A MN101C54A Panasonic Semiconductor lower limit for operation guarantee for flash memory built-in type is 4.5 V
Image: MN101C54C MN101C54C Panasonic Semiconductor lower limit for operation guarantee for flash memory built-in type is 4.5 V
Image: MN101CF54D MN101CF54D Panasonic Semiconductor lower limit for operation guarantee for flash memory built-in type is 4.5 V
Image: MN101CP54C MN101CP54C Panasonic Semiconductor lower limit for operation guarantee for flash memory built-in type is 4.5 V
Image: 50951-2-4039 50951-2-4039 ebm-papst Inc. metal finger guards
Image: DS26F32MJR-QML DS26F32MJR-QML Texas Instruments quad differential line receivers also available guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5, condition A
Image: DS26F32MW/883 DS26F32MW/883 Texas Instruments quad differential line receivers also available guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5, condition A
Image: DS26F32MWG/883 DS26F32MWG/883 Texas Instruments quad differential line receivers also available guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5, condition A
Image: DS26F32MWGRQMLV DS26F32MWGRQMLV Texas Instruments quad differential line receivers also available guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5, condition A
Image: LM136AH LM136AH Texas Instruments 半导体 2.5V reference diode, guaranteed TO 100k radsi tested TO mil-std-883, method 1019.5
Image: LM136AH-2.5RQV LM136AH-2.5RQV Texas Instruments 2.5V reference diode, guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5
Image: LM136AH-2.5RQML LM136AH-2.5RQML Texas Instruments 2.5V reference diode, guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5
Image: BCR10PM-12LD BCR10PM-12LD Renata triac medium power use (the product guaranteed maximum junction temperature of 150??C)
Image: BCR10PM-12LD-A8 BCR10PM-12LD-A8 Renata triac medium power use (the product guaranteed maximum junction temperature of 150??C)
Image: BCR10CM-12LB BCR10CM-12LB Renata triac medium power use (the product guaranteed maximum junction temperature of 150??C)
Image: BCR10CM-12LB-A8 BCR10CM-12LB-A8 Renata triac medium power use (the product guaranteed maximum junction temperature of 150??C)
Image: BCR10CS-12LA BCR10CS-12LA Renata triac medium power use (the product guaranteed maximum junction temperature of 150??C)

©2000-  21IC电子网版权所有

京ICP备11013301号 京公网安备 11010802024343号