|
SN54ACT3632HFP |
Texas Instruments |
|
|
512 】 36 】 2 clocked bidirectional first-IN, first-out memory |
|
74ACT2708 |
Fairchild Semiconductor |
  |
集成电路
|
64 x 9 first-In, first-out memory |
|
AM7204A-25RC |
Advanced Micro Devices |
|
|
high density first-IN first-out(fifo) 4096 x 9-bit cmos memory |
|
AM7204A-35JC |
Advanced Micro Devices |
|
|
high density first-IN first-out(fifo) 4096 x 9-bit cmos memory |
|
AM7204A-35PC |
Advanced Micro Devices |
|
|
high density first-IN first-out(fifo) 4096 x 9-bit cmos memory |
|
AM7204A-35RC |
Advanced Micro Devices |
|
|
high density first-IN first-out(fifo) 4096 x 9-bit cmos memory |
|
AM7204A-50JC |
Advanced Micro Devices |
|
|
high density first-IN first-out(fifo) 4096 x 9-bit cmos memory |
|
AM7204A-50PC |
Advanced Micro Devices |
|
|
high density first-IN first-out(fifo) 4096 x 9-bit cmos memory |
|
SN74ACT7882PN |
Texas Instruments |
|
|
2048 】 18 clocked first-IN, first-out memory |
|
ACT7881 |
Texas Instruments |
|
|
1024 】 18 clocked first-IN, first-out memory |
|
SN74ACT2235-30PM |
Texas Instruments |
|
|
1024 】 9 】 2 asynchronous bidirectional first-IN, first-out memory |
|
SN74ACT7201LA15DV |
Texas Instruments |
|
|
256 】 9, 512 】 9, 1024 】 9 asynchronous first-IN, first-out memories |
|
SN54ACT7881 |
Texas Instruments |
|
|
1024 】 18 clocked first-IN, first-out memory |
|
SN74ACT7202LA15RJ |
Texas Instruments |
|
|
256 】 9, 512 】 9, 1024 】 9 asynchronous first-IN, first-out memories |
|
SN74ACT7808-30PM |
Texas Instruments |
|
|
2048 】 9 strobed first-IN, first-out memory |
|
SN74ACT7202LA25DV |
Texas Instruments |
|
|
256 】 9, 512 】 9, 1024 】 9 asynchronous first-IN, first-out memories |
|
SN74ACT7200L25DV |
Texas Instruments |
|
|
256 】 9, 512 】 9, 1024 】 9 asynchronous first-IN, first-out memories |
|
SN74ALS236 |
Texas Instruments |
  |
半导体
|
64 】 4 asynchronous first-IN, first-out memory |
|
SN74ACT2227 |
Texas Instruments |
  |
半导体
|
dual 64 】 1, dual 256 】 1 first-IN, first-out memories |
|
SN74ACT7200L20RJ |
Texas Instruments |
|
|
256 】 9, 512 】 9, 1024 】 9 asynchronous first-IN, first-out memories |