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Q62702-F1240 |
Siemens Semiconductor Group |
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npn silicon RF transistors (suitable for common emitter RF, IF amplifiers low collector-base capacitance due to contact shield diffusion) |
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Q62702-F1287 |
Siemens Semiconductor Group |
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npn silicon RF transistors (suitable for common emitter RF, IF amplifiers low collector-base capacitance due to contact shield diffusion) |
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GLEG112 |
Sharp Electrionic Components |
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┆2mm, forming type, colored diffusion, compact led lamp for backlight/indicator |
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GLHD112 |
Sharp Electrionic Components |
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┆2mm, forming type, colored diffusion, compact led lamp for backlight/indicator |
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GLHS112 |
Sharp Electrionic Components |
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┆2mm, forming type, colored diffusion, compact led lamp for backlight/indicator |
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GLHY112 |
Sharp Electrionic Components |
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┆2mm, forming type, colored diffusion, compact led lamp for backlight/indicator |
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GLPR112 |
Sharp Electrionic Components |
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┆2mm, forming type, colored diffusion, compact led lamp for backlight/indicator |
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2SC3977A |
Panasonic Semiconductor |
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silicon npn triple diffusion planar type(for high breakdown voltage high-speed switching) |
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SR3517-B |
AUK corp |
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red colored diffusion lens type 3mm(T-1) all plastic mold type high luminosity |
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SR3517-H |
AUK corp |
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red colored diffusion lens type 3mm(T-1) all plastic mold type high luminosity |