关键词dep
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图片 型号 厂商 标准 分类 描述
Image: BF996SA BF996SA Vishay Siliconix N.channel dual gate mos-fieldeffect tetrode, depletion mode
Image: BF996SB BF996SB Vishay Siliconix N.channel dual gate mos-fieldeffect tetrode, depletion mode
Image: BF998RA BF998RA Vishay Siliconix N-channel dual gate mos-fieldeffect tetrode, depletion mode
Image: BF998RAW BF998RAW Vishay Siliconix N-channel dual gate mos-fieldeffect tetrode, depletion mode
Image: BF998RB BF998RB Vishay Siliconix N-channel dual gate mos-fieldeffect tetrode, depletion mode
Image: BF998RBW BF998RBW Vishay Siliconix N-channel dual gate mos-fieldeffect tetrode, depletion mode
Image: K4R271669A K4R271669A Samsung semiconductor 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
Image: K4R271669A-N(M)CK7 K4R271669A-N(M)CK7 Samsung semiconductor 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
Image: BSD22 BSD22 Philips Semiconductors mosfet N-channel depletion switching transistor
Image: BF960 BF960 Vishay Telefunken N-channel dual gate mos-fieldeffect tetrode.depletion mode
Image: BF964 BF964 Vishay Siliconix N-channel dual gate mos-fieldeffect tetrode, depletion mode
Image: BF964S BF964S Vishay Siliconix N-channel dual gate mos-fieldeffect tetrode, depletion mode
Image: BF966S BF966S Vishay Siliconix N-channel dual gate mos-fieldeffect tetrode, depletion mode
Image: K4R271669A-N(M)CK8 K4R271669A-N(M)CK8 Samsung semiconductor 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
Image: K4R271669A-Nb(M)CcG6 K4R271669A-Nb(M)CcG6 Samsung semiconductor 256k x 16/18 bit x 2*16 dependent banks direct rdramtm
Image: BFW10 BFW10 Motorola, Inc vhf/uhf amplifier(N-channel, depletion)
Image: BFW11 BFW11 Motorola, Inc vhf/uhf amplifier(N-channel, depletion)
Image: DN3135 DN3135 Supertex, Inc N-channel depletion-mode vertical dmos fets
Image: DN3135K1 DN3135K1 Supertex, Inc N-channel depletion-mode vertical dmos fets
Image: DN3135N8 DN3135N8 Supertex, Inc N-channel depletion-mode vertical dmos fets

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