图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
K7I641882M-FC25 |
Samsung semiconductor |
|
|
72mb M-die ddrii sram specification 165 fbga with Pb & Pb-free (rohs compliant) |
|
K7I641882M-FC30 |
Samsung semiconductor |
|
|
72mb M-die ddrii sram specification 165 fbga with Pb & Pb-free (rohs compliant) |
|
K7J641882M-FC30 |
Samsung semiconductor |
|
|
72mb M-die ddrii sram specification |
|
K7J641882M-FECI16 |
Samsung semiconductor |
|
|
72mb M-die ddrii sram specification |
|
K7I641882M-EI20 |
Samsung semiconductor |
|
|
72mb M-die ddrii sram specification 165 fbga with Pb & Pb-free (rohs compliant) |
|
K7I163682B |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I161882B-FC16 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I161882B-FC20 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I161882B-FC25 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I161882B-FC30 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I163682B-FC16 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I163682B-FC20 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I163682B-FC25 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I163682B-FC30 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I321882M |
Samsung semiconductor |
|
|
1mx36 & 2mx18 ddrii cio b2 sram |
|
UPD44324082F5-E33-EQ... |
NEC |
|
|
36m-bit ddrii sram 2-word burst operation |
|
UPD44324092F5-E33-EQ... |
NEC |
|
|
36m-bit ddrii sram 2-word burst operation |
|
UPD44324182F5-E33-EQ... |
NEC |
|
|
36m-bit ddrii sram 2-word burst operation |
|
UPD44324362F5-E33-EQ... |
NEC |
|
|
36m-bit ddrii sram 2-word burst operation |
|
UPD44164182F5-E40-EQ... |
NEC |
|
|
18m-bit ddrii sram 2-word burst operation |