|
CD4042BDG4 |
Texas Instruments |
|
半导体
集成电路(IC)
|
闭锁 cmos quad clocked 'D' latch |
|
ADS809 |
Texas Instruments |
|
半导体
|
12-ref='/w_bit.html'>bit, 80 msps ref='/w_adc.html'>adc SE/diff, ref='/w_int.html'>int/ref='/w_ext.html'>ext ref., flexible clocking, selectable fullscale range and pwrdown 48-htqfp -40 to 85 |
|
SN74ABT7819-15PN |
Texas Instruments |
|
|
512 】 18 】 2 clocked bidirectional first-IN, first-out memory |
|
CD4042BF3AS2534 |
Texas Instruments |
|
半导体
逻辑
|
cmos quad clocked 'D' latch 16-cdip |
|
CD4042BF3AS2329 |
Texas Instruments |
|
半导体
逻辑
|
cmos quad clocked 'D' latch 16-cdip |
|
CD4042BDTE4 |
Texas Instruments |
|
半导体
集成电路(IC)
|
闭锁 cmos quad clocked 'D' latch |
|
SN74ACT3632 |
Texas Instruments |
|
半导体
|
512 】 36 】 2 clocked bidirectional first-IN, first-out memory |
|
SN54ACT3632 |
Texas Instruments |
|
|
512 】 36 】 2 clocked bidirectional first-IN, first-out memory |
|
SN74ABT3614 |
Texas Instruments |
|
半导体
|
64 】 36 】 2 clocked bidirectional first-IN, first-out memory with bus matching and byte swapping |
|
SN74ALVC7813 |
Texas Instruments |
|
半导体
|
64 】 18 low-power clocked first-IN, first-out memory |
|
SN74ACT3631 |
Texas Instruments |
|
半导体
|
512 】 36 clocked first-IN, first-out memory |
|
SN54ABT7819 |
Texas Instruments |
|
|
512 】 18 】 2 clocked bidirectional first-IN, first-out memory |
|
SN74ALVC7805 |
Texas Instruments |
|
半导体
|
256 】 18 low-power clocked first-IN, first-out memory |
|
SN74ACT2236 |
Texas Instruments |
|
|
1024×9×2 asynchronous bidirectional clocked fifo memory(1024×9×2异步双向fifo存储器) |
|
CD4042B |
Texas Instruments |
|
半导体
|
cmos quad clocked D latch |
|
SN74ABT3611 |
Texas Instruments |
|
|
64 】 36 clocked first-IN, first-out memory |
|
SN74ACT2226 |
Texas Instruments |
|
半导体
|
dual 64 】 1, dual 256 】 1 clocked first-IN, first-out memories |
|
SN74ACT7813 |
Texas Instruments |
|
半导体
|
64 】 18 clocked first-IN, first-out memory |
|
SN74ACT3641 |
Texas Instruments |
|
半导体
|
1024 】 36 clocked first-IN, first-out memory |
|
SN74ABT7819 |
Texas Instruments |
|
集成电路
|
512 】 18 】 2 clocked bidirectional first-IN, first-out memory |