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IS61DDB42M36-300M3L |
Integrated Silicon Solution, Inc |
|
|
72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 4) cio synchronous srams |
|
IS61DDB44M18-300M3L |
Integrated Silicon Solution, Inc |
|
|
72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 4) cio synchronous srams |
|
IS61DDB24M18-300M3L |
Integrated Silicon Solution, Inc |
|
|
72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 2) cio synchronous srams |
|
MT49H16M18 |
Micron Technology Inc |
|
集成电路
|
288mb cio reduced latency |
|
MT49H32M9 |
Micron Technology Inc |
|
集成电路
|
288mb cio reduced latency |
|
MT49H8M36 |
Micron Technology Inc |
|
集成电路
|
288mb cio reduced latency |
|
K7I163682B |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
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K7I161882B-FC16 |
Samsung semiconductor |
|
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512kx36-bit, 1mx18-bit ddrii cio b2 sram |
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K7I161882B-FC20 |
Samsung semiconductor |
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|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
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K7I161882B-FC25 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
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K7I161882B-FC30 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I163682B-FC16 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I163682B-FC20 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I163682B-FC25 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I163682B-FC30 |
Samsung semiconductor |
|
|
512kx36-bit, 1mx18-bit ddrii cio b2 sram |
|
K7I321882M |
Samsung semiconductor |
|
|
1mx36 & 2mx18 ddrii cio b2 sram |
|
IS61DDB41M36-250M3 |
Integrated Silicon Solution, Inc |
|
|
36 Mb (1M x 36 & 2M x 18) ddr-II (burst of 4) cio synchronous srams |
|
IS61DDB42M18 |
Integrated Silicon Solution, Inc |
|
|
36 Mb (1M x 36 & 2M x 18) ddr-II (burst of 4) cio synchronous srams |
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IS61DDB42M18-250M3 |
Integrated Silicon Solution, Inc |
|
|
36 Mb (1M x 36 & 2M x 18) ddr-II (burst of 4) cio synchronous srams |
|
1701032 |
Phoenix Contact |
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连接器
I/O 连接器
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I/O connectors cioc 4-24-1.6-M |