|
PBRN113ES |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? |
|
PBRN113ET |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? |
|
PBRN113ZK |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? |
|
PBRN113ZT |
NXP Semiconductors |
|
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? |
|
PBRN113EK |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? |
|
PBRN113Z |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? |
|
PBRN113ZS |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? |
|
PBSS4350T |
NXP Semiconductors |
|
半导体
|
50 V; 3 A npn low vcesat (biss) transistor |
|
PBSS4350SPN |
NXP Semiconductors |
|
|
50 V, 2.7 A pnp/pnp low vcesat (biss) transistor |
|
PBSS4330X |
NXP Semiconductors |
|
|
30 V, 3 A npn low vcesat (biss) transistor |
|
PBSS4350X |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
PBSS4350SS |
NXP Semiconductors |
|
半导体
|
50 V, 2.7 A pnp/pnp low vcesat (biss) transistor |
|
PBSS4250X |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
PBSS4440D |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
PBSS4480X |
NXP Semiconductors |
|
半导体
|
80 V, 4 A npn low vcesat (biss) transistor |
|
PBSS9110D |
NXP Semiconductors |
|
半导体
|
100 V, 1 A pnp low vcesat (biss) transistor |
|
PBSS9110T |
NXP Semiconductors |
|
半导体
|
100 V, 1 A pnp low vcesat (biss) transistor |
|
PBSS4520X |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
PBSS4540X |
NXP Semiconductors |
|
半导体
|
40 V, 5 A npn low vcesat (biss) transistor |
|
PBSS4630PA |
NXP Semiconductors |
|
半导体
|
30 V, 6 A npn low vcesat (biss) transistor |