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PBHV8115Z_08 |
NXP Semiconductors |
|
|
150 V, 1 A npn high-voltage low vcesat (biss) transistor |
|
PBSS4420D |
NXP Semiconductors |
|
半导体
|
20 V, 4 A npn low vcesat (biss) transistor |
|
PBSS5160DS |
NXP Semiconductors |
|
半导体
|
60 V, 1 A pnp/pnp low vcesat (biss) transistor |
|
PBSS5160K |
NXP Semiconductors |
|
半导体
|
60 V, 1 A pnp low vcesat (biss) transistor |
|
PBSS5160U |
NXP Semiconductors |
|
半导体
|
60 V, 1 A pnp low vcesat (biss) transistor |
|
PBSS5420D |
NXP Semiconductors |
|
半导体
|
20 V, 4 A pnp low vcesat (biss) transistor |
|
PESD12VS2UT |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
PBRN123ET |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? |
|
PBRN123EK |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? |
|
PBRN123E |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? |
|
PBRN123YK |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? |
|
PBRN123YS |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? |
|
PBRN123YT |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? |
|
PBRN123Y |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? |
|
PBRN123ES |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? |
|
BCV62B |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
BCM62B |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
BCM61B |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
BCV61A |
NXP Semiconductors |
|
半导体
|
low vcesat (biss) transistors |
|
PBRN113E |
NXP Semiconductors |
|
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? |