|
PBRN123YK |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? |
|
PBRN123YS |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? |
|
PBRN123YT |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? |
|
PBRN123Y |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 10 k? |
|
PBRN123ES |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 2.2 k?, R2 = 2.2 k? |
|
BCV62B |
NXP Semiconductors |
  |
半导体
|
low vcesat (biss) transistors |
|
BCM62B |
NXP Semiconductors |
  |
半导体
|
low vcesat (biss) transistors |
|
BCM61B |
NXP Semiconductors |
  |
半导体
|
low vcesat (biss) transistors |
|
BCV61A |
NXP Semiconductors |
  |
半导体
|
low vcesat (biss) transistors |
|
PBRN113E |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? |
|
PBRN113ES |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? |
|
PBRN113ET |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? |
|
PBRN113ZK |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? |
|
PBRN113ZT |
NXP Semiconductors |
|
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? |
|
PBRN113EK |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 1 k? |
|
PBRN113Z |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? |
|
PBRN113ZS |
NXP Semiconductors |
  |
半导体
|
npn 800 mA, 40 V biss rets; R1 = 1 k?, R2 = 10 k? |
|
PBSS4350T |
NXP Semiconductors |
  |
半导体
|
50 V; 3 A npn low vcesat (biss) transistor |
|
PBSS4350SPN |
NXP Semiconductors |
|
|
50 V, 2.7 A pnp/pnp low vcesat (biss) transistor |
|
PBSS4330X |
NXP Semiconductors |
|
|
30 V, 3 A npn low vcesat (biss) transistor |