|
AS7C31026B-12JCN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 3.3V, 12ns, fast 64k x 16 asynch sram |
|
AS7C31025B-12JCN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 3.3V, 12ns, fast 128k x 8 asynch sram |
|
AS7C1024B-20JCN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 5V, 20ns fast 128k x 8 asynch sram |
|
AS7C1024B-12JCN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 5V, 12ns fast 128k x 8 asynch sram |
|
AS7C1024B-15TJCN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 5V, 15ns fast 128k x 8 asynch sram |
|
AS7C31024B-15TJCN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 3.3V, 15ns, fast 128k x 8 asynch sram |
|
AS7C1026B-15JIN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 5V, 15ns fast 64k x 16 asynch sram |
|
AS7C31025B-12JIN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 3.3V, 12ns, fast 128k x 8 asynch sram |
|
AS7C1026B-12JCN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 5V, 12ns fast 64k x 16 asynch sram |
|
AS6C4008A-55ZIN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 4M, 2.7-5.5V, 55ns 512k x 8 asynch sram |
|
AS6C4008A-55SIN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 4M, 2.7-5.5V, 55ns 512k x 8 asynch sram |
|
AS7C34096A-12JCN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 4M, 3.3V, 12ns, fast 512k x 8 asynch sram |
|
AS7C1026C-15TIN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 5V, 15ns fast 64k x 16 asynch sram |
|
AS6C4008-55ZIN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 4M, 2.7-5.5V, 55ns 512k x 8 asynch sram |
|
TL16C550DIRHBR |
Texas Instruments |
  |
半导体
集成电路 - IC
|
uart interface IC asynch comm element |
|
SN74ALVC7814-25DLR |
Texas Instruments |
  |
半导体
集成电路 - IC
|
fifo 64 x 18 3.3-V asynch fifo memory |
|
TL16C550DRHBR |
Texas Instruments |
  |
半导体
集成电路 - IC
|
uart interface IC asynch comm element |
|
AP3211HKTR-G1 |
Diodes Incorporated |
  |
半导体
集成电路 - IC
|
voltage regulators - switching regulators 1.4mhz 1.5A asynch DC/DC 4.5V to 23v |
|
TL16C550DIZQSR |
Texas Instruments |
  |
半导体
集成电路 - IC
|
uart interface IC asynch comm element |
|
AS7C34096A-12JIN |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 4M, 3.3V, 12ns, fast 512k x 8 asynch sram |