|
TSM12N65CI C0 |
Taiwan Semiconductor |
|
半导体
分离式半导体
|
mosfet 650v 6A N channel power mosfet |
|
1N8031-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers 650v, 1A, 225 deg. C |
|
2N7636-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt sic high temp sjt 650v 4A 225 degree C |
|
2N7638-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt sic high temp sjt 650v 8A 225 degree C |
|
2N7635-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt sic high temp sjt 650v 4A 225 degree C |
|
2N7637-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt sic high temp sjt 650v 7A 225 degree C |
|
2N7639-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt sic high temp sjt 650v 15a 225degree C |
|
2N7640-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
transistors bipolar - bjt sic high temp sjt 650v 16a 225degree C |
|
GB05SHT06-CAL |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers sic 650v 5A 225deg C AI top and Au bottom |
|
GB05SHT06-CAU |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers sic 650v 5A 225 degc Au top and Au bottom |
|
1N8030-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers 650v, 1A, 225 deg C |
|
1N8033-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers 650v, 5A, 225 deg C |
|
1N8032-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers 650v, 5A, 225 deg C |
|
1N8035-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers 650v, 20a, 225 deg C |
|
1N8034-GA |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers 650v, 20a, 225 deg C |
|
GB20SHT06-CAL |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers sic 650v 20a 225degc AI top and Au bottom |
|
GB01SHT06-CAU |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers sic 650v 1A 225deg C Au top and Au bottom |
|
GB01SHT06-CAL |
GeneSiC Semiconductor |
|
半导体
分离式半导体
|
schottky diodes & rectifiers sic 650v 1A 225deg C Al top/Au bottom |
|
SPP07N60C3 |
Infineon Technologies |
  |
半导体
分离式半导体
|
mosFET cool mos N-CH 650v 7.3A |
|
SPI07N60C3 |
Infineon Technologies |
  |
半导体
分离式半导体
|
mosFET cool mos pwr trans max 650v |