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KM23C64000T |
Samsung semiconductor |
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64m-bit (8mx8 /4mx16) cmos mask rom |
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KMM372F804BS |
Samsung semiconductor |
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8M x 72 dram dimm with ecc using 4mx16, 4mx4 4K refresh, 3.3V |
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HY5DV641622AT |
Hynix Semiconductor |
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64m(4mx16) ddr sdram |
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HY5DV641622AT-33 |
Hynix Semiconductor |
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64m(4mx16) ddr sdram |
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HY5DV641622AT-36 |
Hynix Semiconductor |
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64m(4mx16) ddr sdram |
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HY5DV641622AT-4 |
Hynix Semiconductor |
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64m(4mx16) ddr sdram |
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HY5DV641622AT-5 |
Hynix Semiconductor |
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64m(4mx16) ddr sdram |
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K5T6432YT |
Samsung semiconductor |
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multi-chip package memory 64m bit 4mx16 four bank nor flash memory / 32m bit 2mx16 utram |
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KMM5324000BSWG |
Samsung semiconductor |
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4M x 32 dram simm using 4mx16, 4K refresh, 5V |
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KMM5324004BSWG |
Samsung semiconductor |
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4M x 32 dram simm using 4mx16, 4K refresh, 5V |
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KMM5324004CSWG |
Samsung semiconductor |
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4M x 32 dram simm using 4mx16, 4K refresh, 5V |
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KMM5328004BSWG |
Samsung semiconductor |
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8M x 32 dram simm using 4mx16, 4K refresh, 5V |
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KMM5328004CSWG |
Samsung semiconductor |
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8M x 32 dram simm using 4mx16, 4K refresh, 5V |
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KMM5364003BSWG |
Samsung semiconductor |
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4M x 36 dram simm using 4mx16 & quad cas 4mx4, 4K refresh, 5V |
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KMM5364003CSWG |
Samsung semiconductor |
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4M x 36 dram simm using 4mx16 & quad cas 4mx4, 4K refresh, 5V |
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KMM5364005CSWG |
Samsung semiconductor |
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4M x 36 dram simm using 4mx16 & quad cas 4mx4, 4K refresh, 5V |
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KMM372V404BS |
Samsung semiconductor |
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4M x 72 dram dimm with ecc using 4mx16, 4mx4 4K refresh, 3.3V |
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KMM5328004BSW |
Samsung semiconductor |
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8M x 32 dram simm using 4mx16, 4K refresh, 5V |
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KMM5328004CSW |
Samsung semiconductor |
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8M x 32 dram simm using 4mx16, 4K refresh, 5V |
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KMM5364003CSW |
Samsung semiconductor |
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4M x 36 dram simm using 4mx16 & quad cas 4mx4, 4K refresh, 5V |