图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
K6R1008C1D-UI10 |
Samsung semiconductor |
|
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256kx4 bit (with OE) high-speed cmos static ram(5.0V operating). |
|
K6R1016C1D-EC10 |
Samsung semiconductor |
|
|
256kx4 bit (with OE) high-speed cmos static ram(5.0V operating). |
|
K6R1016C1D-EI10 |
Samsung semiconductor |
|
|
256kx4 bit (with OE) high-speed cmos static ram(5.0V operating). |
|
K6R1016C1D-JC10 |
Samsung semiconductor |
|
|
256kx4 bit (with OE) high-speed cmos static ram(5.0V operating). |
|
K6R1016C1D-KC10 |
Samsung semiconductor |
|
|
256kx4 bit (with OE) high-speed cmos static ram(5.0V operating). |
|
KM641003A-12 |
Samsung semiconductor |
|
|
256kx4 high speed static ram(5V operating), revolutionary pin out operated at commercial and industrial temperature range |
|
KM641003A-20 |
Samsung semiconductor |
|
|
256kx4 high speed static ram(5V operating), revolutionary pin out operated at commercial and industrial temperature range |
|
KM641003A-15 |
Samsung semiconductor |
|
|
256kx4 high speed static ram(5V operating), revolutionary pin out operated at commercial and industrial temperature range |
|
K6R1016V1D-UI10 |
Samsung semiconductor |
|
|
256kx4 bit (with OE) high-speed cmos static ram(5.0V operating). |