|
NVTJD4001NT1G |
ON Semiconductor |
  |
半导体
分离式半导体
|
mosfet nfet 30v 250ma 1.5oh |
|
BAV99-HE3-08 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70v 250ma 4.5A ifsm dual series |
|
|
BAV70-E3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70 volt 250ma 2.0 amp ifsm |
|
|
BAW56-E3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70v 250ma 2A ifsm dual common anode |
|
|
BAW56-HE3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70v 250ma 2A ifsm dual common anode |
|
|
BAV70-HE3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70 volt 250ma 2.0 amp ifsm |
|
|
BAV99-HE3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70v 250ma 4.5A ifsm dual series |
|
|
BAL99-G3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70 volt 250ma 6ns 2A ifsm |
|
|
BAW56-G3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70v 250ma .5A ifsm dual common anode |
|
|
BAV70-G3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70v 250ma 2A ifsm dual common cathode |
|
|
BAS16-G3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100 volt 250ma 6ns 500ma ifsm |
|
BAS16WS-G3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100 volt 250ma 6ns 2A ifsm |
|
BAS16D-G3-18 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100 volt 250ma 6ns 500ma ifsm |
|
|
BAL99-G3-08 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70 volt 250ma 6ns 2A ifsm |
|
|
BAV70-G3-08 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 70v 250ma 2A ifsm dual common cathode |
|
NVTJD4001NT2G |
ON Semiconductor |
|
半导体
分离式半导体
|
mosfet nfet 30v 250ma 1.5oh |
|
|
BAS16WS-G3-08 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100 volt 250ma 6ns 2A ifsm |
|
|
BAS16D-G3-08 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100 volt 250ma 6ns 500ma ifsm |
|
BS107ARL1G |
ON Semiconductor |
|
半导体
分离式半导体
|
mosfet 200v 250ma N-channel |
|
BLT80,115 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF bipolar npn 7.5V 250ma uhf |
