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NM27P040Q120 |
Texas Instruments |
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4,194,304-bit (512k x 8) processor oriented cmos eprom |
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NM27P040Q150 |
Texas Instruments |
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4,194,304-bit (512k x 8) processor oriented cmos eprom |
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NM27P040Q170 |
Texas Instruments |
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4,194,304-bit (512k x 8) processor oriented cmos eprom |
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NM27P040QE150 |
Texas Instruments |
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4,194,304-bit (512k x 8) processor oriented cmos eprom |
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NM27P040QE170 |
Texas Instruments |
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4,194,304-bit (512k x 8) processor oriented cmos eprom |
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NM27P040QM150 |
Texas Instruments |
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4,194,304-bit (512k x 8) processor oriented cmos eprom |
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NM27P040QM200 |
Texas Instruments |
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4,194,304-bit (512k x 8) processor oriented cmos eprom |
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NM27P040QXXX |
Texas Instruments |
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4,194,304-bit (512k x 8) processor oriented cmos eprom |
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NM27C040Q150 |
Fairchild Semiconductor |
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4,194,304-bit (512k x 8) high performance cmos eprom |
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TC55V4400FT-10 |
Toshiba Semiconductor and Storage |
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4.194,304-word BY 4-bit cmos static ram |
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TC55V4400FT-12 |
Toshiba Semiconductor and Storage |
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4.194,304-word BY 4-bit cmos static ram |
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TC55V4400FT-15 |
Toshiba Semiconductor and Storage |
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4.194,304-word BY 4-bit cmos static ram |
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TC514100J-10 |
ETC |
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4,194,304 word X 1 bit dynamic ram |
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TC514100J-80 |
ETC |
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4,194,304 word X 1 bit dynamic ram |
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TC514100Z-10 |
ETC |
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4,194,304 word X 1 bit dynamic ram |
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TC514100Z-80 |
ETC |
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4,194,304 word X 1 bit dynamic ram |
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TC59S6416 |
Toshiba Semiconductor and Storage |
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1,048,576/2,097,152/4,194,304-wordsx4banksx16/8/4-bit S synchronous dynamic ram |
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FM27C040V120 |
Fairchild Semiconductor |
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4,194,304-bit 512k x 8 high performance cmos eprom |
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FM27C040V150 |
Fairchild Semiconductor |
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4,194,304-bit 512k x 8 high performance cmos eprom |
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FM27C040V90 |
Fairchild Semiconductor |
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4,194,304-bit 512k x 8 high performance cmos eprom |