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RA30H1317M-101 |
Mitsubishi Electric |
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rohs compliance , 135-175mhz 30w 12.5V 2 stage amp. for mobile radio |
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RA30H1317M1-101 |
Mitsubishi Electric |
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RF mosfet module 135-175mhz 30w 12.5V 2 stage amp. for mobile radio |
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25002-0201 |
Molex |
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2.54mm (.100") pitch board-to-board ribbon cable jumper - 24 awg, top coated, 2circuits, 3.175mm (0.125") dual-end strip-retained, 0.025m (1.00") length |
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RA30H1317M_06 |
Mitsubishi Electric |
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rohs compliance , 135-175mhz 30w 12.5V 2 stage amp. for mobile radio |
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RA30H1317M-E01 |
Mitsubishi Electric |
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135-175mhz 30w 12.5V mobile radio |
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RA30H1317M |
Mitsubishi Electric |
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135-175mhz 30w 12.5V mobile radio |
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RA30H1317M1 |
Mitsubishi Electric |
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RF mosfet module 135-175mhz 30w 12.5V 2 stage amp. for mobile radio |
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RD07MVS1B |
Mitsubishi Electric |
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silicon mosfet power transistor,175mhz,520mhz,7W |
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RD07MVS2 |
Mitsubishi Electric |
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silicon mosfet power transistor,175mhz,520mhz,7W |
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RD07MUS2B |
Mitsubishi Electric |
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RF power mos fet silicon mosfet power transistor,175mhz,527mhz,7W |
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RD07MVS1-101 |
Mitsubishi Electric |
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silicon mosfet power transistor,175mhz,520mhz,7W |
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RD07MVS1-T112 |
Mitsubishi Electric |
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silicon mosfet power transistor,175mhz,520mhz,7W |
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RD07MVS1 |
Mitsubishi Electric |
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silicon mosfet power transistor,175mhz,520mhz,7W |
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RA07M1317M-E01 |
Mitsubishi Electric |
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135-175mhz 6.5W 7.2V, 2 stage amp. for portable radio |
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ICS002AI40L |
Integrated Device Technology |
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175mhz, femtoclocktm vcxo based sonet/sdh jitter attenuator |
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AES1G |
Taiwan Semiconductor Company, Ltd |
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175ma. super fast surface mount rectifiers |
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AES1H |
Taiwan Semiconductor Company, Ltd |
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175ma. super fast surface mount rectifiers |
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AES1J |
Taiwan Semiconductor Company, Ltd |
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175ma. super fast surface mount rectifiers |
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D1221UK |
Semelab / TT electronics |
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gold metallised multi-purpose silicon dmos RF fet 10w - 12.5V - 175mhz single ended |
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D1222UK |
Semelab / TT electronics |
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gold metallised multi-purpose silicon dmos RF fet 60w - 12.5V - 175mhz push-pull |