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关键词Q62702-A1037
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  • Siemens Semiconductor Group (1)
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    为您共找出"200+"个相关器件
    图片 型号 厂商 标准 分类 描述
    Image: Q62702-A1037 Q62702-A1037 Siemens Semiconductor Group silicon pin diode (pin diode for high speed switching of RF signals low forward resistance very low capacitance for frequencies up to 3 ghz)
    Image: V23993-A1037-B V23993-A1037-B Vincotech 嵌入式解决方案 射频/无线模块和开发工具 gps 模块与开发工具 gps receiver module full nmea ext temp
    Image: Q62702-F1291 Q62702-F1291 Siemens Semiconductor Group npn silicon RF transistor (for low noise, high-gain amplifiers up to 2ghz for linear broadband amplifiers)
    Image: Q62702-F1292 Q62702-F1292 Siemens Semiconductor Group npn silicon RF transistor (for low noise, low distortion broadband amplifiers in antenna and telecommunications)
    Image: Q62702-F1296 Q62702-F1296 Siemens Semiconductor Group npn silicon RF transistor (for low-power amplifiers in mobile communication systems pager at collector currents from 0.2ma to 2.5ma)
    Image: Q62702-F1298 Q62702-F1298 Siemens Semiconductor Group npn silicon RF transistor (for low noise, low-power amplifiers in mobile communication systems)
    Image: Q62702-F1238 Q62702-F1238 Siemens Semiconductor Group npn silicon high-voltage transistors (suitable for video output stages in TV sets and switching power supplies high breakdown voltage)
    Image: Q62702-F1239 Q62702-F1239 Siemens Semiconductor Group pnp silicon high-voltage transistors (suitable for video output stages in TV sets and switching power supplies high breakdown voltage)
    Image: Q62702-G0116 Q62702-G0116 TriQuint Semiconductor low-noise, high-linearity packaged phemt fet
    Image: Q62702-F1394 Q62702-F1394 Siemens Semiconductor Group gaas fet (low noise high gain for low-noise front end amplifiers for dbs down converters)
    Image: Q62702-F1393 Q62702-F1393 Siemens Semiconductor Group gaas fet (low noise high gain for low-noise front end amplifiers for dbs down converters)
    Image: Q62702-F1396 Q62702-F1396 Siemens Semiconductor Group npn silicon RF transistor (for low noise, high-gain broadband amplifiers at collector currents from 1ma to 20ma)
    Image: Q62702-F1391 Q62702-F1391 Siemens Semiconductor Group gaas mmic (biased dual gate gaas fet)
    Image: Q62702-G0041 Q62702-G0041 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 9 dB typical gain at 1.0 ghz 9 dbm typical P-1db at 1.0 ghz 3 dB-bandwidth: DC to 2.4 ghz)
    Image: Q62702-G0043 Q62702-G0043 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 16 dB typical gain at 1.0 ghz 12 dbm typical P-1db at 1.0 ghz)
    Image: Q62702-G0042 Q62702-G0042 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 11 dB typical gain at 1.0 ghz 9 dbm typical P-1db at 1.0 ghz)
    Image: Q62702-P0330 Q62702-P0330 Siemens Semiconductor Group gaas-IR-lumineszenzdiode in smt-gehause gaas infrared emitter in smt package
    Image: Q62702-A1274 Q62702-A1274 Siemens Semiconductor Group silicon schottky diodes (for mixer applications in the vhf / uhf range for high-speed switching applications)
    Image: Q62702-A1277 Q62702-A1277 Siemens Semiconductor Group silicon switching diode array (for high-speed switching applications connected in series internal galvanic isolated diodes in one package)
    Image: Q62702-A1270 Q62702-A1270 Siemens Semiconductor Group silicon RF switching diode preliminary data (design for use in shunt configuration high shunt signal isolation low shunt insertion loss)

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