图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
NESG2021M16 |
CEL |
 |
半导体
|
RF 锗 RO 551-nesg2021m16-A |
|
NESG2021M16-A |
CEL |
 |
半导体
分离式半导体
|
transistors RF bipolar npn high frequency |
|
NESG2021M16-T3-A |
CEL |
 |
半导体
分离式半导体
|
transistors RF bipolar npn high frequency |
|
NESG2021M16-T3-A |
California Micro Devices Corp |
|
|
necs npn sige high frequency transistor |
|
NESG2021M16 |
California Micro Devices Corp |
|
|
necs npn sige high frequency transistor |
|
NESG2021M16-T3 |
California Micro Devices Corp |
|
|
necs npn sige high frequency transistor |
|
NESG2021M16 |
NEC |
|
|
npn sige RF transistor for low noise, high-gain amplification 6-pin lead-less minimold (m16, 1208 pkg) |
|
NESG2021M16-T3 |
NEC |
|
|
npn sige RF transistor for low noise, high-gain amplification 6-pin lead-less minimold (m16, 1208 pkg) |
|
NESG2021M16-A |
NEC |
|
|
npn sige RF transistor for low noise, high-gain amplification 6-pin lead-less minimold (m16, 1208 pkg) |
|
NESG2021M16-T3-A |
NEC |
|
|
npn sige RF transistor for low noise, high-gain amplification 6-pin lead-less minimold (m16, 1208 pkg) |