|
MAPR-000912-500S00 |
MACOM |
|
半导体
分离式半导体
|
transistors RF mosfet 960-1215mhz 500w gain: 9.0db min |
|
MAPR-000912-500S00 |
M/A-Com Technology Solutions |
|
半导体
RF 晶体管 (BJT)
|
trans npn 500w 960mhz-1215mhz |
|
MAPR-002731-115M00 |
MACOM |
|
半导体
分离式半导体
|
transistors RF mosfet 2.7-2.9ghz gain7.6db 115w vswr: 2.1 |
|
MAPR-002729-170M00 |
MACOM |
|
半导体
分离式半导体
|
transistors RF mosfet 2.7-2.9ghz gain8.5db 170w vswr: 2.1 |
|
MAPR-002729-170M00 |
M/A-Com Technology Solutions |
|
半导体
RF 晶体管 (BJT)
|
170w,2.7-3.1 ghz,100us/10% |
|
MAPR-002731-115M00 |
M/A-Com Technology Solutions |
|
半导体
RF 晶体管 (BJT)
|
115w, 2.7 - 3.1 ghz 10%, 36v |
|
MAPR-002729-170M00 |
Tyco Electronics |
|
|
radar pulsed power transistor 2.7-2.9ghz, 36v, 100レsec, 170w |
|
MAPR-001090-350S00 |
M/A-Com Technology Solutions |
|
|
avionics pulsed power transistor 350w, 1025-1150 mhz, 10??s pulse, 1% duty |
|
MAGX-000912-125L00 |
MACOM |
|
半导体
分离式半导体
|
transistors RF jfet 960-1215mhz 50volt 125w Pk gain 18.9db |
|
MAGX-000912-250L00 |
MACOM |
|
半导体
分离式半导体
|
transistors RF jfet 960-1215mhz 50volt 250w Pk gain 18.7db |
|
MAGX-000912-500L0S |
MACOM |
|
半导体
分离式半导体
|
transistors RF jfet 960-1215mhz gan sic 128us pls flangeless |
|
MAGX-000912-500L00 |
MACOM |
|
半导体
分离式半导体
|
transistors RF jfet 960-1215mhz gan sic 128 uS pulse flanged |
|
MAMG-000912-090PSM |
MACOM |
|
嵌入式解决方案
射频/无线模块
|
RF modules 960-1215mhz 90w gan pae 60% gain 30db |
|
MAGX-000912-250L00 |
M/A-Com Technology Solutions |
|
半导体
RF FET
|
transistor,gan,250w 960-1215mhz |
|
MAGX-000912-125L00 |
M/A-Com Technology Solutions |
|
半导体
RF FET
|
transistor,gan,125w 960-1215mhz |
|
MAGX-000912-500L00 |
M/A-Com Technology Solutions |
|
半导体
RF FET
|
fets RF gan 500w 960-1215mhz |
|
MAMG-000912-090PSM |
M/A-Com Technology Solutions |
|
半导体
RF FET
|
transistor gan 90w 960-1215mhz |