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MACH210A-12JI |
Advanced Micro Devices |
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high-density EE cmos programmable logic |
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MACH210A-18JI |
Advanced Micro Devices |
|
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high-density EE cmos programmable logic |
|
MACH210A-10 |
Advanced Micro Devices |
|
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high-density EE cmos programmable logic |
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MACH210A-10JC |
Lattice Semiconductor Corporation |
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high-density EE cmos programmable logic |
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MACH210A-10VC |
Lattice Semiconductor Corporation |
|
|
high-density EE cmos programmable logic |
|
MACH210A-12 |
Advanced Micro Devices |
|
|
high-density EE cmos programmable logic |
|
MACH210A-12JC |
Lattice Semiconductor Corporation |
|
|
high-density EE cmos programmable logic |
|
MACH210A-12VC |
Lattice Semiconductor Corporation |
|
|
high-density EE cmos programmable logic |
|
MACH210A-14JI |
Advanced Micro Devices |
|
|
high-density EE cmos programmable logic |
|
MACH210A-24JI |
Advanced Micro Devices |
|
|
high-density EE cmos programmable logic |
|
MACH210A-7 |
Advanced Micro Devices |
|
|
high-density EE cmos programmable logic |
|
MACH210A-7 |
Lattice Semiconductor Corporation |
|
|
high-density EE cmos programmable logic |
|
MACH210A-7JC |
Lattice Semiconductor Corporation |
|
|
high-density EE cmos programmable logic |
|
MACH210A-7VC |
Lattice Semiconductor Corporation |
|
|
high-density EE cmos programmable logic |
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AS7C1024C-12JINTR |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 5V, 12ns fast 128k x 8 asynch sram |
|
AS7C31026C-12JINTR |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 3.3V, 12ns, fast 64k x 16 asynch sram |
|
AS7C31025C-12JINTR |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 3.3V, 12ns, fast 128k x 8 asynch sram |
|
AS7C31025B-12JINTR |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 3.3V, 12ns, fast 128k x 8 asynch sram |
|
AS7C1024B-12JINTR |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 5V, 12ns fast 128k x 8 asynch sram |
|
AS7C31026B-12JINTR |
Alliance Memory |
  |
半导体
集成电路 - IC
|
sram 1M, 3.3V, 12ns, fast 64k x 16 asynch sram |