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KM416RD8C |
Samsung semiconductor |
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128/144Mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramTM |
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KM416S4030CT-F7 |
Samsung semiconductor |
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1M x 16bit x 4 banks synchronous dram |
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KM416S4030CT-FH |
Samsung semiconductor |
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1M x 16bit x 4 banks synchronous dram |
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KM416S1120DT-G/F8 |
Samsung semiconductor |
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512k x 16bit x 2 banks synchronous dram lvttl |
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KM416V256D |
Samsung semiconductor |
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256k x 16bit cmos dynamic ram with fast page mode |
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KM418RD16AD |
Samsung semiconductor |
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128/144Mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramTM |
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KM416V1004A |
Samsung semiconductor |
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1M x 16 bit cmos dynamic ram with extended data out |
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KM416V12CT-L5 |
Samsung semiconductor |
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1M x 16bit cmos dynamic ram with extended data out |
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KM416V4104CS-45 |
Samsung semiconductor |
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4M x 16bit cmos dynamic ram with extended data out |
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KM418RD2AC |
Samsung semiconductor |
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128/144Mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramTM |
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KM416S4030CT-F10 |
Samsung semiconductor |
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1M x 16bit x 4 banks synchronous dram |
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KM418RD2C |
Samsung semiconductor |
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128/144Mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramTM |
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KM418RD16D |
Samsung semiconductor |
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128/144Mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramTM |
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KM418RD32AD |
Samsung semiconductor |
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128/144Mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramTM |
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KM418RD32C |
Samsung semiconductor |
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128/144Mbit rdram 256k x 16/18 bit x 2*16 dependent banks direct rdramTM |
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KM4101IC8 |
Fairchild Semiconductor |
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low cost, +2.7V and +5V, 260mhz rail-to-rail amplifiers |
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KM4110IT5 |
Fairchild Semiconductor |
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0.5ma, low cost, +2.7V & +5V, 75mhz rail-to-rail amplifiers |
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KM4101IT6TR3 |
Fairchild Semiconductor |
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low cost, +2.7V and +5V, 260mhz rail-to-rail amplifiers |
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KM4101IC8TR3 |
Fairchild Semiconductor |
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low cost, +2.7V and +5V, 260mhz rail-to-rail amplifiers |
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KM4110IT5TR3 |
Fairchild Semiconductor |
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0.5ma, low cost, +2.7V & +5V, 75mhz rail-to-rail amplifiers |