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K6R1004C1B-8 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J12 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J8 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-12 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-C10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-C12 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-C8 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |