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K6R1004C1B-C10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-8 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J12 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-J8 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-10 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-12 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-C12 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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K6R1004C1B-C8 |
Samsung semiconductor |
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256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out |
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DF0.5-C10 |
LEM |
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DC current transducer DF-c10 |
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DF0.1-C10 |
LEM |
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DC current transducer DF-c10 |
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DF0.3-C10 |
LEM |
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DC current transducer DF-c10 |
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DF-C10 |
LEM |
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DC current transducer DF-c10 |
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DF0.01-C10 |
LEM |
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DC current transducer DF-c10 |
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DF0.02-C10 |
LEM |
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DC current transducer DF-c10 |
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DF0.05-C10 |
LEM |
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DC current transducer DF-c10 |
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BZX79-C10,113 |
NXP Semiconductors |
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半导体
分离式半导体
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zener diodes diode zener 5 pct |
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BZX79-C10,133 |
NXP Semiconductors |
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半导体
分离式半导体
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zener diodes diode zener 5 pct |
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BZX84-C10,215 |
NXP Semiconductors |
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半导体
分离式半导体
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zener diodes 250mw 10v 5% |