首页 > 关键词 > K6R1
关键词K6R1
厂商
  • Samsung semiconductor (244)
    • 标准
      
    图片 型号 厂商 标准 分类 描述
    为您共找出"200+"个相关器件
    图片 型号 厂商 标准 分类 描述
    Image: K6R1008C1B-I12 K6R1008C1B-I12 Samsung semiconductor 128kx8 bit high speed static ram5v operating, revolutionary pin out. operated at commercial and industrial temperature ranges.
    Image: K6R1008C1C-C10 K6R1008C1C-C10 Samsung semiconductor 128kx8 bit high-speed cmos static ram(5V operating). operated at commercial and industrial temperature ranges.
    Image: K6R1008V1D-JC10 K6R1008V1D-JC10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1008V1C-TI15 K6R1008V1C-TI15 Samsung semiconductor 128kx8 bit high-speed cmos static ram(3.3V operating).
    Image: K6R1008V1D-JI08 K6R1008V1D-JI08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1008V1D-JI08/10 K6R1008V1D-JI08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1008V1D-JI10 K6R1008V1D-JI10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1008V1D-JTCI08/10 K6R1008V1D-JTCI08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1008V1D-KC08 K6R1008V1D-KC08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1008V1D-KC08/10 K6R1008V1D-KC08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1008V1D-KC10 K6R1008V1D-KC10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1008V1D-KI10 K6R1008V1D-KI10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1008V1D-KI08/10 K6R1008V1D-KI08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1008V1D-TC08 K6R1008V1D-TC08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-EI08/10 K6R1016V1D-EI08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1016V1D-EC10 K6R1016V1D-EC10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-JC08 K6R1016V1D-JC08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-JC10 K6R1016V1D-JC10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1C-I20 K6R1016V1C-I20 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1016V1D-JC08/10 K6R1016V1D-JC08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.

    最新搜索

    ©2000-  21IC电子网版权所有

    京ICP备11013301号 京公网安备 11010802024343号