首页 > 关键词 > K6R1
关键词K6R1
厂商
  • Samsung semiconductor (244)
    • 标准
      
    图片 型号 厂商 标准 分类 描述
    为您共找出"200+"个相关器件
    图片 型号 厂商 标准 分类 描述
    Image: K6R1004C1A-C20 K6R1004C1A-C20 Samsung semiconductor 256kx4 high speed static ram(5V operating), revolutionary pin out
    Image: K6R1004C1A-J20 K6R1004C1A-J20 Samsung semiconductor 256kx4 high speed static ram(5V operating), revolutionary pin out
    Image: K6R1004C1A-J12 K6R1004C1A-J12 Samsung semiconductor 256kx4 high speed static ram(5V operating), revolutionary pin out
    Image: K6R1004C1B-10 K6R1004C1B-10 Samsung semiconductor 256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out
    Image: K6R1004C1B-12 K6R1004C1B-12 Samsung semiconductor 256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out
    Image: K6R1004C1A-J15 K6R1004C1A-J15 Samsung semiconductor 256kx4 high speed static ram(5V operating), revolutionary pin out
    Image: K6R1004C1B-C10 K6R1004C1B-C10 Samsung semiconductor 256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out
    Image: K6R1004C1B-C12 K6R1004C1B-C12 Samsung semiconductor 256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out
    Image: K6R1004C1B-C8 K6R1004C1B-C8 Samsung semiconductor 256kx4 bit (with OE) high speed static ram(5.0V operating), revolutionary pin out
    Image: K6R1004C1A-20 K6R1004C1A-20 Samsung semiconductor 256kx4 high speed static ram(5V operating), revolutionary pin out
    Image: K6R1016V1D-KI08/10 K6R1016V1D-KI08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1016V1D-KI08 K6R1016V1D-KI08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-JI08 K6R1016V1D-JI08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-KI10 K6R1016V1D-KI10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-TC08 K6R1016V1D-TC08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-TC08/10 K6R1016V1D-TC08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1016V1D-TI08 K6R1016V1D-TI08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-TI10 K6R1016V1D-TI10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016V1D-TI08/10 K6R1016V1D-TI08/10 Samsung semiconductor 64kx16 bit high-speed cmos static ram(3.3V operating) operated at commercial and industrial temperature ranges.
    Image: K6R1016V1D-UC08 K6R1016V1D-UC08 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).

    最新搜索

    ©2000-  21IC电子网版权所有

    京ICP备11013301号 京公网安备 11010802024343号