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关键词K4S161622E-TC10
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    为您共找出"200+"个相关器件
    图片 型号 厂商 标准 分类 描述
    Image: K4S161622E-TC10 K4S161622E-TC10 Samsung semiconductor 1M x 16 sdram
    Image: TC10-15N4RJ TC10-15N4RJ Vishay Sprague 无源元器件 电容器 tantalum capacitors - solid leaded 10uf 15v 5% N4
    Image: TC10-15N4AM TC10-15N4AM Vishay Sprague 无源元器件 电容器 tantalum capacitors - solid leaded 10uf 15v 20% N4
    Image: TC10-02B TC10-02B Vishay Dale 无源元器件 变压器音频和信号 transformers audio & signal
    Image: 7021B-TC10-MTG 7021B-TC10-MTG Aavid Thermalloy 热量管理 散热片 heat sinks
    Image: TC10-14-C100 TC10-14-C100 Panduit 电线和电缆 电线保护和管理 cable mounting & accessories tack clip single 36" bundle
    Image: A-TB500-TC10 A-TB500-TC10 Assmann WSW Components 连接器 接线板 - 线至板 terminal block
    Image: K4S643232C-TC10 K4S643232C-TC10 Samsung semiconductor 2M x 32 Sdram 512k x 32bit x 4 banks synchronous dram lvttl
    Image: K4S280832B-TC10 K4S280832B-TC10 Samsung semiconductor 4M x 8bit x 4 banks sychronous dram
    Image: K6R4016C1D-TC10 K6R4016C1D-TC10 Samsung semiconductor 256kx16 bit high speed static ram(5.0V operating). operated at commercial and industrial temperature ranges.
    Image: K4S281632B-TC10 K4S281632B-TC10 Samsung semiconductor 128mbit Sdram 2M x 16bit x 4 banks synchronous dram lvttl
    Image: K6R4008V1D-TC10 K6R4008V1D-TC10 Samsung semiconductor 256kx16 bit high speed static ram(5.0V operating). operated at commercial and industrial temperature ranges.
    Image: K6R4008C1D-TC10 K6R4008C1D-TC10 Samsung semiconductor 256kx16 bit high speed static ram(5.0V operating). operated at commercial and industrial temperature ranges.
    Image: K4S281632M-TC10 K4S281632M-TC10 Samsung semiconductor 128mbit Sdram 2M x 16bit x 4 banks synchronous dram lvttl
    Image: K6R1016V1D-TC10 K6R1016V1D-TC10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1016C1D-TC10 K6R1016C1D-TC10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1008V1D-TC10 K6R1008V1D-TC10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K6R1008C1D-TC10 K6R1008C1D-TC10 Samsung semiconductor 256kx4 bit (with OE) high-speed cmos static ram(5.0V operating).
    Image: K3S7V2000M-TC10 K3S7V2000M-TC10 Samsung semiconductor 64m-bit (4mx16 /2mx32) synchronous maskrom
    Image: K4S161622E-TC80 K4S161622E-TC80 Samsung semiconductor 1M x 16 sdram

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