|
HN1D02F(TE85L,F) |
Toshiba Semiconductor and Storage |
  |
半导体
二极管,整流器 - 阵列
|
switching diode 80v CC 6 sm6 |
|
HN1D02F |
Toshiba Semiconductor and Storage |
  |
半导体
|
diode (ultra high speed switching applications) |
|
HN1D02FE,LF |
Toshiba |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching switching diode, 80v es6 0.1A high speed |
|
HN1D02FU,LF |
Toshiba |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching us6-M8, |
|
HN1D02FU(T5L,F,T) |
Toshiba Semiconductor and Storage |
  |
半导体
二极管,整流器 - 阵列
|
switching diode 80v CC 6 us6 |
|
HN1D02FE,LF |
Toshiba Semiconductor and Storage |
  |
半导体
二极管,整流器 - 阵列
|
switching diode 80v CC 6 es6 |
|
HN1D02FU,LF |
Toshiba Semiconductor and Storage |
  |
半导体
二极管,整流器 - 阵列
|
switching diode 80v CC 6 us6 |
|
HN1D02FU |
Toshiba Semiconductor and Storage |
  |
半导体
|
silicon epitaxial planar type ultra high speed switching application |
|
HN1D02F_07 |
Toshiba Semiconductor and Storage |
|
|
ultra-high-speed switching applications |
|
HN1D02FE |
Toshiba Semiconductor and Storage |
  |
半导体
|
silicon epitaxial planar type ultra high speed switching application |
|
HN1D02FU_07 |
Toshiba Semiconductor and Storage |
|
|
silicon epitaxial planar type ultra high speed switching application |