|
HN1B01F-Y(TE85L,F) |
Toshiba |
 |
半导体
分离式半导体
|
transistors bipolar - bjt dual trans pnp x 2 sm6, -50v, -0.15a |
|
HN1B01F-GR(TE85L,F |
Toshiba |
 |
半导体
分离式半导体
|
transistors bipolar - bjt dual trans pnp x 2 sm6, -50v, -0.15a |
|
HN1B01F-Y(TE85L,F) |
Toshiba Semiconductor and Storage |
  |
半导体
晶体管(BJT) - 阵列
|
tran pnp/npn -50v -0.15a sm6 |
|
HN1B01F-GR(TE85L,F |
Toshiba Semiconductor and Storage |
  |
半导体
晶体管(BJT) - 阵列
|
tran pnp/npn -50v -0.15a sm6 |
|
HN1B01F |
Toshiba Semiconductor and Storage |
  |
半导体
|
npn epitaxial type (audio frequency general purpose amplifier applications) |
|
HN1B01FDW1T1G |
ON Semiconductor |
  |
半导体
分离式半导体
|
transistors bipolar - bjt 200ma 60v dual complementary |
|
HN1B01FUGRLFT |
Toshiba |
 |
半导体
分离式半导体
|
transistors bipolar - bjt vceo 50v IC 150ma hfe 120 - 400 150ma |
|
HN1B01FU-Y(L,F,T) |
Toshiba Semiconductor and Storage |
  |
半导体
晶体管(BJT) - 阵列
|
tran pnp/npn -50v -0.15a us6 |
|
HN1B01FUGRLFT |
Toshiba Semiconductor and Storage |
  |
半导体
晶体管(BJT) - 阵列
|
transistor npn/pnp us6-pln |
|
HN1B01FU-GR,LF |
Toshiba Semiconductor and Storage |
  |
半导体
晶体管(BJT) - 阵列
|
trans npn/pnp 50v 0.15a us6-pln |
|
HN1B01FDW1T1 |
ON Semiconductor |
|
半导体
晶体管(BJT) - 阵列
|
trans npn/pnp 50v 200ma sc74 |
|
HN1B01FU |
Toshiba Semiconductor and Storage |
  |
半导体
|
npn epitaxial type (audio frequency general purpose amplifier applications) |