|
BUK9606-40B,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosfet high perf trenchmos |
|
BUK9606-40B |
NXP Semiconductors |
  |
半导体
|
trenchmos logic level fet |
|
BUK9606-75B,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosfet high perf trenchmos |
|
BUK9606-55B,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosfet high perf trenchmos |
|
BUK9606-55A,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosFET tape13 pwr-mos |
|
BUK9606-55B |
ETC |
|
|
N-channel trenchmostm logic level fet |
|
BUK9606-55A |
Philips Semiconductors |
|
|
trenchmos logic level fet |
|
BUK9606-30 |
Philips Semiconductors |
|
|
trenchmos transistor logic level fet |
|
BUK9606-30 |
NXP Semiconductors |
|
|
trenchmos transistor logic level fet |
|
BUK9606-55B |
NXP Semiconductors |
  |
半导体
|
N-channel trenchmos fet |
|
BUK9606-55A |
NXP Semiconductors |
  |
半导体
|
trenchmos logic level fet |
|
BUK9606-75B |
NXP Semiconductors |
  |
半导体
|
trenchmos logic level fet |
|
PSMN1R1-40BS,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosfet std N-chanmosfet |
|
PSMN4R5-40BS,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosfet std N-chanmosfet |
|
PSMN2R8-40BS,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosfet std N-chanmosfet |
|
BLF6G15L-40BRN,112 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
transistors RF mosfet single 65v 11a 4.3S |
|
PSMN8R0-40BS,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosfet N-CH 40 V 7.6 mohm mosfet |
|
PSMN2R2-40BS,118 |
NXP Semiconductors |
  |
半导体
分离式半导体
|
mosfet std N-chanmosfet |
|
BZW04-40BHE3/73 |
Vishay Semiconductors |
 |
半导体
分离式半导体
|
tvs diodes - transient voltage suppressors 400w 40v 5% bidir |
|
BZW04-40BHE3/54 |
Vishay Semiconductors |
 |
半导体
分离式半导体
|
tvs diodes - transient voltage suppressors 400w 40v 5% bidir |