|
M55355L-F14M |
ETC |
|
|
m55302 |
|
M55302L-F14S |
ETC |
|
|
m55302 |
|
M55355L-F14S |
ETC |
|
|
m55302 |
|
F1410 |
Polyfet RF Devices |
|
|
patented gold metalized silicon gate enhancement mode RF power vdmos transistor |
|
F1415 |
Polyfet RF Devices |
|
|
patented gold metalized silicon gate enhancement mode RF power vdmos transistor |
|
F1430 |
Polyfet RF Devices |
|
|
patented gold metalized silicon gate enhancement mode RF power vdmos transistor |
|
A-7720-F14HP909B |
Molex |
|
|
2.54mm (.100") KK? idt double cantilever contact, 14 circuits, tin (Sn), feed-through, 24 Stranded, solid, fused, topcoat, and 26 fused and topcoat, green ID strip |
|
Q62702-F1494 |
Siemens Semiconductor Group |
|
|
npn silicon RF transistor (for low noise, low-power amplifiers in mobile communication systems |
|
Q62702-F1498 |
Siemens Semiconductor Group |
|
|
silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 5V integrated stabilized bias network) |
|
Q62702-F1426 |
Siemens Semiconductor Group |
|
|
npn silicon RF transistor (for uhf/vhf frequency converters and local oscillators) |
|
Q62702-F1432 |
Siemens Semiconductor Group |
|
|
npn silicon RF transistor (for low-distortion broadband output amplifier stages in antenna and telecommunications) |
|
Q62702-F1487 |
Siemens Semiconductor Group |
|
|
silicon N-channel mosfet tetrode (for low noise, high gain controlled input stages up to 1ghz operating voltage 12v integrated stabilized bias network |
|
Q62702-F1488 |
Siemens Semiconductor Group |
|
|
npn silicon RF transistor (for broadband amplifiers up to 2ghz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
|
Q62702-F1489 |
Siemens Semiconductor Group |
|
|
npn silicon RF transistor (for low distortion broadband amplifiers and oscillators up to 2ghz at collector currents from 5 mA to 30 mA) |
|
Q62702-F1491 |
Siemens Semiconductor Group |
|
|
npn silicon RF transistor )for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12ma) |
|
Q62702-F1492 |
Siemens Semiconductor Group |
|
|
npn silicon RF transistor (for low noise, high-gain broadband amplifiers at collector currents from 1ma to 20ma) |
|
Q62702-F1493 |
Siemens Semiconductor Group |
|
|
npn silicon RF transistor (for low noise, high-gain broadband amplifiers at collector current from 2 mA to 30ma) |
|
AEDB-9340-L13A |
Avago Technologies |
|
机电产品
编码器
|
encoders 6 channel encoder 1250cpr |
|
AEDB-9340-W06C |
Avago Technologies |
|
机电产品
编码器
|
encoders 6 channel encoder 2500cpr |
|
AEDB-9340-B13C |
Avago Technologies |
|
机电产品
编码器
|
encoders 6 channel encoder 1000cpr |