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Datasheet下载地址
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PSMN070-200P,127的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 35 A |
Rds On - Drain-Source Resistance: | 70 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 250 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 90 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 100 ns |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 80 ns |
Part # Aliases: | PSMN070-200P |
PSMN070-200P,127相关文档
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- SPICE model: PSMN070_200P SPICE model (v.1.3)
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