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IPB096N03L G的详细信息
Manufacturer: | Infineon |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Infineon Technologies |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 35 A |
Rds On - Drain-Source Resistance: | 9.6 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 42 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 2.6 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 3.2 ns |
Series: | IPB096N03 |
Factory Pack Quantity: | 1000 |
Tradename: | OptiMOS |
Typical Turn-Off Delay Time: | 16 ns |
Part # Aliases: | IPB096N03LGATMA1 SP000254711 |
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