Image ZXT10P12DE6TA
型号:

ZXT10P12DE6TA

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt 12v pnp supersot4
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ZXT10P12DE6TA的详细信息

Manufacturer: Diodes Incorporated
Product Category: Transistors Bipolar - BJT
RoHS: In Transition
Brand: Diodes Incorporated
Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 12 V
Collector- Emitter Voltage VCEO Max: - 12 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: - 195 mV
Maximum DC Collector Current: 3 A
Gain Bandwidth Product fT: 110 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-6
Continuous Collector Current: - 3 A
DC Collector/Base Gain hfe Min: 300 at 10 mA at 2 V, 300 at 100 mA at 2 V, 180 at 2.5 A at 2 V, 60 at 8 A at 2 V, 45 at 10 A at 2 V
DC Current Gain hFE Max: 300 at 10 mA at 2 V
Maximum Power Dissipation: 1.1 W
Minimum Operating Temperature: - 55 C
Packaging: Reel
Factory Pack Quantity: 3000