Image ZXMN10B08E6TA
型号:

ZXMN10B08E6TA

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体分离式半导体
描述: mosfet 100v N-chnl umos
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ZXMN10B08E6TA的详细信息

Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS: Yes
Brand: Diodes Incorporated
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 1.9 A
Rds On - Drain-Source Resistance: 230 mOhms
Configuration: Single Quad Drain
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.1 W
Mounting Style: SMD/SMT
Package / Case: SOT-23-6
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 2.1 ns
Minimum Operating Temperature: - 55 C
Rise Time: 2.1 ns
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 12.1 ns