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ZXMN10A25KTC的详细信息
Manufacturer: | Diodes Incorporated |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Diodes Incorporated |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 6.4 A |
Rds On - Drain-Source Resistance: | 125 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 9.6 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 2.11 W |
Mounting Style: | SMD/SMT |
Package / Case: | TO-252 (DPAK) |
Packaging: | Reel |
Channel Mode: | Enhancement |
Ciss - Input Capacitance: | 859 pF |
Fall Time: | 9.4 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 3.7 ns |
Factory Pack Quantity: | 2500 |
Typical Turn-Off Delay Time: | 17.7 ns |
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