Image ZXMHC6A07T8TA
型号:

ZXMHC6A07T8TA

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体分离式半导体
描述: mosfet 60v umos H-bridge
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ZXMHC6A07T8TA的详细信息

Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS: Yes
Brand: Diodes Incorporated
Transistor Polarity: N and P-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 1.8 A
Rds On - Drain-Source Resistance: 300 mOhms, 425 mOhms
Configuration: Half-Bridge
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 3.2 nC, 5.1 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.7 W
Mounting Style: SMD/SMT
Package / Case: SM-8
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 2 ns, 5.8 ns
Forward Transconductance - Min: 2.3 S, 1.8 S
Minimum Operating Temperature: - 55 C
Rise Time: 1.4 ns, 2.3 ns
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 4.9 ns, 13 ns