Image ZVN4206AVSTZ
型号:

ZVN4206AVSTZ

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体分离式半导体
描述: mosfet avalanche
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ZVN4206AVSTZ的详细信息

Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS: Yes
Brand: Diodes Incorporated
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 600 mA
Rds On - Drain-Source Resistance: 1.5 Ohms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 3 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 700 mW
Mounting Style: Through Hole
Package / Case: TO-92-3
Packaging: Bulk
Channel Mode: Enhancement
Fall Time: 12 ns
Forward Transconductance - Min: 300 mS
Minimum Operating Temperature: - 55 C
Rise Time: 12 ns
Factory Pack Quantity: 2000
Typical Turn-Off Delay Time: 12 ns