Image VNS1NV04DP-E
型号:

VNS1NV04DP-E

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: mosfet omnifet power mosfet 40v 1.7 A
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VNS1NV04DP-E的详细信息

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Yes
Brand: STMicroelectronics
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 40 mA
Rds On - Drain-Source Resistance: 250 mOhms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 4 W
Mounting Style: SMD/SMT
Package / Case: SO-8
Packaging: Tube
Fall Time: 200 ns
Forward Transconductance - Min: 2 S
Minimum Operating Temperature: - 40 C
Rise Time: 170 ns
Series: VNS1NV04DP-E
Factory Pack Quantity: 100
Typical Turn-Off Delay Time: 350 ns

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