Image UNR412100A
型号:

UNR412100A

厂商: Panasonic Electronic Components
标准:
分类: 半导体晶体管(BJT) - 单路﹐预偏压式
描述: trans prebias pnp 300mw NS-B1
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UNR412100A的详细信息

Datasheets:
UNR412100A View all Specifications:
Product Photos:
NS-A1:
Catalog Drawings:
NS-B1 Type Side:
NS-B1 Type Front:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Single, Pre-Biased
Series: -
Packaging : Cut Tape (CT)
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: NS-B1
Other Names: UNR412100ACT