TPS1101D的详细信息
Manufacturer: | Texas Instruments |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Texas Instruments |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | 15 V |
Vgs - Gate-Source Breakdown Voltage: | - 15 V, 2 V |
Id - Continuous Drain Current: | 2.3 A |
Rds On - Drain-Source Resistance: | 90 mOhms |
Configuration: | Single Quad Drain Triple Source |
Maximum Operating Temperature: | + 125 C |
Pd - Power Dissipation: | 791 mW |
Mounting Style: | SMD/SMT |
Package / Case: | SOIC-8 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 5.5 ns |
Minimum Operating Temperature: | - 40 C |
Rise Time: | 5.5 ns |
Series: | TPS1101 |
Factory Pack Quantity: | 75 |
Typical Turn-Off Delay Time: | 19 ns |
Unit Weight: | 76 mg |
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