Image TPN4R303NL,L1Q
型号:

TPN4R303NL,L1Q

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 30v 63a 8tson
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TPN4R303NL,L1Q的详细信息

Datasheets:
TPN4R303NL:
Product Photos:
8-PowerVDFN:
8-PowerVDFN,-8-TSON:
Standard Package : 5,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) @ Vgs: 14.8nC @ 10V
Input Capacitance (Ciss) @ Vds: 1400pF @ 15V
Power - Max: 34W
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-TSON Advance
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: TPN4R303NL,L1Q(MTPN4R303NLL1QTR

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