型号:

TPC8212-H(TE12LQ,M

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体FET - 阵列
描述: mosfet 2N-CH 30v 6A sop8
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TPC8212-H(TE12LQ,M的详细信息

Datasheets:
TPC8212-H:
Mosfets Prod Guide:
Product Photos:
8-SOIC:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: -
Packaging : Tape & Reel (TR)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) @ Vds: 840pF @ 10V
Power - Max: 450mW
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)