型号:

TPC6006-H(TE85L,F)

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 40v 3.9A vs6 2-3t1a
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >>

TPC6006-H(TE85L,F)的详细信息

Datasheets:
TPC6006-H:
Mosfets Prod Guide:
Product Photos:
2-3T1A:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) @ Vgs: 4.4nC @ 10V
Input Capacitance (Ciss) @ Vds: 251pF @ 10V
Power - Max: -
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: VS-6 (2.9x2.8)